| Title |
Ferroelectric Properties of PZT thin Films by Rapid Thermal Annealing |
| Authors |
정규원(Jeong, Kyu-Won) ; 박영(Park, Young) ; 주필연(Ju, Pil-Yeon) ; 조익현(Cho, Ik-Hyun) ; 임동건(Lim, Dong-Gun) ; 이준신(Yi, Jun-Sin) ; 송준태(Song, Joon-Tae) |
| Keywords |
RTA ; RF magnetron sputtering ; PZT thin films ; hysteresis loop ; fatigue |
| Abstract |
PZT thin films(3500 ) have been prepared onto Pt/Ti/SiO_2/Si substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at 700°C for 60 seconds were like these remanent polarization were 12.1 μC/cm^2, coercive field were 110 kV/cm, leakage current density were 4.1×10-7 A/cm^2, εr=442, and remanent polarization were decreased by 22% after 1010 cycles, respectively. |