| Title |
Temperature Dependent Breakdown Voltage and On-resistance of Si Power MOSFETs |
| Authors |
박일용(Park, Il-Yong) ; 최연익(Choe, Yeon-Ik) ; 정상구(Jeong, Sang-Gu) |
| Keywords |
Silicon ; power MOSFETs ; breakdown voltage ; on-resistance ; temperature ; dependence |
| Abstract |
Closed-form expressions for the temperature dependent breakdown voltage and the on-resistance of the Si power MOSFETs were derived by employing effective temperature dependent ionization coefficient for electrons and holes. The breakdown voltage increases by 20% and the on-resistance increases 2 times when the temperature increases from 300 K to 423 K. The analytic results normalized to the values at 300 K show good agreement with the experimental data of Motorola within 3.5% and 7% for the breakdown voltage and the on-resistance, respectively. |