| Title |
The Structure and Dielectric Properties of the (Ba,Sr)TiO_3 Thin Films with the Substrate Temperature |
| Keywords |
(Ba,Sr)TiO_3 thin films ; RF sputtering ; Substrate temperature ; Dielectric properties |
| Abstract |
(Ba, Sr)TiO_{3}[BST] thin films were fabricated on the Pt/TiO_2/SiO_2/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 500°C were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 500°C was 10^{-9} A/ textrm cm^2 with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current(10^{-9} A/ textrm cm^2), BST thin films deposited at 500°C is expecting for the application of DRAM. |