| Title |
Deposition of diamond film at low pressure using the RF plasma CVD |
| Authors |
구효근(Koo, Hyo-Geun) ; 박상현(Park Sang-Hyun) ; 박재윤(Park Jae-Yoon) ; 김경환(Kim Kyoung-Hwan) |
| Keywords |
Diamond thin film ; RF plasma CVD ; Raman spectrum |
| Abstract |
Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate(10×10[mm^2]) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of 840~870[°C], an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films. |