| Title |
Electrical Characteristics of Novel LIGBT with p Channel Gate and p+ Ring at Reverse Channel Structure |
| Authors |
강이구(Gang, Lee-Gu) ; 성만영(Seong, Man-Yeong) |
| Keywords |
Reverse Channel ; p-channel gate ; Latch up ; p+ ring ; High Speed ; No buffer layer ; No Tail Current |
| Abstract |
lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring. |