| Title |
Annealing Effect on the Photoluminescence of Si Nanocrystallites Thin Films |
| Authors |
전경아(Jeon, Gyeong-A) ; 김종훈(Kim, Jong-Hun) ; 최진백(Choe, Jin-Baek) ; 이상렬(Lee, Sang-Ryeol) |
| Keywords |
nanocrystallites ; pulsed laser deposition ; annealing ; hydrogen passivation ; Quantum size effect. |
| Abstract |
Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to 800°C Hydrogen passivation was then performed in the forming gas (95 % N_2 + 5 % H_2) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite |