| Title |
The Growth Mechanism of Ga_2O_3 Nanobelt |
| Authors |
이종수(Lee, Jong-Su) ; 박광수(Park, Gwang-Su) ; 성만영(Seong, Man-Yeong) ; 김상식(Kim, Sang-Sik) |
| Keywords |
Ga_2O_3 ; nanobelt ; growth mechanism |
| Abstract |
Ga_2O_3 nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation. |