| Title |
Properties with Annealing Temperature of (Sr_{0.9}Ca_{0.1})TiO_{3} Ceramic Thin Film |
| Authors |
소병문(So, Byung-Moon) ; 조춘남(Cho, Choon-Nam) ; 신철기(Shin, Cheol-Gi) ; 김진사(Kim, Jin-Sa) ; 김충혁(Kim, Chung-Hyeok) |
| Keywords |
Thin Film ; Substrate ; Annealing ; Dielectric Constant ; Dielectric loss |
| Abstract |
The (Sr_{0.9}Ca_{0.1})TiO_3(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO_2/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at 600^{ cric}C. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ~ +90°C. The capacitance characteristics showed a stable value within pm4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz. |