| Title |
Film Bulk Acoustic Wave Resonator for Bandpass Filter |
| Authors |
김인태 ; 박윤권 ; 이시형 ; 이윤희 ; 이전국 ; 김남수 ; 주병권 |
| Keywords |
FRAR ; Piezoelectric ; Surface micromachining ; MMIC |
| Abstract |
Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed Si_3N_4SiO_2Si _3N_4 multi layer and air gap is about 50μ{ textrm} m. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, K^2_{eff} and Q are 4.1% and 1100. |