| Title |
The Algorithm for Calculating the Base-Collector Breakdown Voltage of NPN BJT for Integrated Circuits |
| Keywords |
항복전압 ; 3차인 구조 ; 이온화 계수 ; 곡율반경 breakdown |
| Abstract |
The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data |