KIEE - The Transactions of the Korean Institute of Electrical Engineers

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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.

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Title	A New Junction Termination Structure by Employing Trench and FLR
Authors	하민우 ; 오재근 ; 최연익 ; 한민구
Page	pp.257-260
ISSN	1975-8359
Keywords	Junction termination ; Breakdown ; Trench ; Ring ; FLR
Abstract	We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) BV_ceo.

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