| Title |
A Study on the AlN Thin Film on A1_2O_3 Substrate Prepared by Reactive RF Magnetron Sputtering System for SAW Device Application |
| Authors |
고봉철 ; 손진운 ; 김경석 ; 엄무수 ; 남창우 ; 이규철 |
| Keywords |
SAW (Surface Acoustic Wave) ; IDT(Interdigital Transducer) ; AlN thin film ; center frequency |
| Abstract |
AlM thin film has been deposited on A1_2O_3 substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1_2O_3 structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］. |