| Title |
Electrical Properties of SBT Capacitors with Top Electrodes |
| Authors |
조춘남 ; 오용철 ; 김진사 ; 정일형 ; 신철기 ; 최운식 ; 김충혁 ; 이준웅 |
| Keywords |
RF sputter ; top electrodes ; remanent polarization ; coercive electric field ; dielectric constant |
| Abstract |
The A S r_{0.7}B i_{2.6}T a_2 O_{9} (SBT)thin films are deposited on Pt-coated electrode(Pt/TiO_2/SiO_2/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 750°C and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/ textrm cm^2 and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110^{-10} A/ textrm cm^2, respectively.y.y. |