| Title |
A study on Silicon dry Etching for Solar Cell Fabrication Using Hollow Cathode Plasma System |
| Authors |
유진수 ; Suresh Kumar Dhungel(Suresh Kumar Dhungel) ; 이준신 |
| Keywords |
Hollow Cathode Plasma(HCP) ; Multicrystalline ; Ion bombardment ; Texturing |
| Abstract |
This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF_{6} and O_2 gases in the HCP dry etch process. Silicon etch rate of 0.5μ textrm m/min was achieved with SF_6O_2plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s. |