| Title |
Characteristics of Diamond Films Deposited on Cemented Tungsten Carbide Substrate |
| Keywords |
Diamond film ; MWPCVD ; RFPCVD ; WC-Co substrate ; Raman spectrum |
| Abstract |
Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from CH_4-H_2-O_2 gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from CH_4-H_2-O_2 gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6) pm0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from CH_4-H_2-O_2 gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology. |