| Title |
A Study on Impurities Measurement and Physical Properties of Semiconductive Shield at Power Cable |
| Keywords |
Semiconductive Shield ; ionic Impurities ; Density ; Specific Heat |
| Abstract |
In this paper, we investigated impurities content and physical properties showing by changing the content of carbon black that is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter And then specific heat (Cp) was measured by DSC (Differential Scanning Calorimetry). A ranges of measurement temperature were from 0°[C] to 200°[C], and heating temperature was 4°[C/min]. Impurities content was highly measured according to increasing the content of carbon black from this experimental result, also density was increased according to these properties. Especially impurities content values of the Al and A2 of existing resins were measured more than 4000［ppm］. Specific heat from the DSC results was decreased according to increasing the content of carbon black. Because ionic impurities of carbon black having Fe, Co, Mn, Al and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy. |