| Title |
Influence of Substrate Temperature of SCT Thin Film by RF Sputtering Method |
| Authors |
김진사(Kim Jin-Sa) ; 오용철(Oh Yong-Cheol) ; 조춘남(Cho Choon-Nam) ; 이동규(Lee Dong-Gyu) ; 신철기(Shin Cheol-Gi) ; 김충혁(Kim Chung-Hyeok) |
| Keywords |
Thin Film ; Substrate Temperature ; Dielectric Constant ; Leakage Current |
| Abstract |
The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases. |