| Title |
A Study on the Properties of SiO_2 Thin Films using Sol-Gel Method |
| Keywords |
SiO₂ Thin Films ; Sol-Gel Method ; Dipping Method ; Relative Dielectric Constant ; Dielectric Dissipation Factor |
| Abstract |
SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz. |