| Title |
PZTN Sintered at the Low Temperature by the Glass Phase Transient Processing |
| Keywords |
Glass Ceramic Processing ; Transient Processing ; Low Temperature Sintering ; Relative Dielectric Constant |
| Abstract |
This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the 950°C and 1050°C. This was confirmed that the sintering temperature of PZTN was reduced by 950°C and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties. |