| Title |
Properties Hall Effect of Indium sulfide Thin Film Prepared by Spray Pyrolysis Method |
| Authors |
오금곤(Oh Gum-Kon) ; 김형곤(Kim Hyung-Gon) ; 김병철(Kim Byung-Cheol) ; 최영일(Choi Young-Il) ; 김남오(Kim Nam-Oh) |
| Keywords |
Impurity Optical Absorption ; Crystal Field Theory ; Electrical Conductivity ; Hall Mobility ; Energy Band Gap |
| Abstract |
The In_2S_3 and In_2S_3:Co^{2+} thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for In_2S_3 and 1.81eV for In_2S_3:Co^{2+} at 298K. The direct energy band gap was 2.67ev for In_2S_3:Co^{2+} thin films. Impurity optical absorption peaks were observed for the In_2S_3:Co^{2+} thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the Co^{2+} ion sited in T_{d} symmetry. The electrical conductivity( sigma), Hall mobility(μ_H), and carrier concentration (n) of the In_2Se_3 thin film were measured, and their temperature dependence was investigated. |