• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
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Title Super Junction LDMOS with N-Buffer Layer
Authors 박일용(Park Il-Yong)
Page pp.72-75
ISSN 1975-8359
Keywords N-Buffer Layer ; LDMOS ; Super Junction
Abstract A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.