| Title |
Reliability Characteristics of Class-E Power Amplifier using Class-F Driving Circuit |
| Keywords |
RF 전력증폭기 Class F ; Class E ; Reliability |
| Abstract |
A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using 0.25μm standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics. |