| Title |
Chemical Mechanical Polishing Characteristics of PZT Thin Films |
| Authors |
서용진(Seo, Yong-Jin) ; 이우선(Lee, Woo-Sun) |
| Keywords |
CMP (chemical mechanical polishing) ; PZT (Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3) |
| Abstract |
In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3 (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique. |