| Title |
Wafer Level Package Using Glass Cap and Wafer with Groove-Shaped Via |
| Authors |
이주호(Lee, Joo-Ho) ; 박해석(Park, Hae-Seok) ; 신제식(Shin, Jea-Sik) ; 권종오(Kwon, Jong-Oh) ; 신광재(Shin, Kwang-Jae) ; 송인상(Song, In-Sang) ; 이상훈(Lee, Sang-Hun) |
| Keywords |
wafer level package (WLP) ; RF MEMS ; Au-Sn eutectic bonding ; FBAR (Film Bulk Acoustic Resonator) |
| Abstract |
In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test. |