| Title |
Improved Contact Characteristics in a Single Tin-Oxide Nanowire Device by a Selective Reactive Ion Etching (RIE) Process |
| Authors |
이준민(Lee, Jun-Min) ; 김대일(Kim, Dae-Il) ; 하정숙(Ha, Jeong-Sook) ; 김규태(Kim, Gyu-Tae) |
| Keywords |
Contact potential ; Tin-Oxide ; Nanowire ; RIE ; Native Oxide |
| Abstract |
Although many structures based on SnO_2 nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the SnO_2 nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single SnO_2 nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The SnO_2 nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a Si/Si_3N_4 substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process. |