| Title |
The Characteristic of Formation CoSi2/Si Thin Film by the RF-Sputtering Method |
| Authors |
조금배(Cho, Geum-Bae) ; 이강연(Lee, Kang-Yoen) ; 최연옥(Choi, Youn-Ok) ; 김남오(Kim, Nam-Oh) ; 정병호(Jeong, Byeong-Ho) |
| Keywords |
CoSi_2 Thin Film ; Electric Furnace ; Sheet Resistivity ; SEM Micrographs ; Optical Transmittance |
| Abstract |
In this paper, the CoSi_2 thin films with thicknesses of about 5μm were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a CoSi_2 target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of 100°C, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of 1×10^{-6} Torr. The annealing treatments of the CoSi_2 thin film were performed from 500, 700 and 900°C for 1h in air ambient by an electric furnace. In order to investigate the CoSi_2 thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the CoSi_2 thin film. |