| Title |
Effects of Nitrogen Additive Gas on the Property of Active Layer and the Device Characteristic in Indium-zinc-oxide thin Film Transistors |
| Authors |
이상혁(Lee, Sang-Hyuk) ; 방정환(Bang, Jung-Hwan) ; 김원(Kim, Won) ; 엄현석(Uhm, Hyun-Seok) ; 박진석(Park, Jin-Seok) |
| Keywords |
Indium-zinc-oxide (IZO) ; Nitrogen addition ; Thin film transistor ; Active layer ; Sputtering |
| Abstract |
Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas (N_2). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as N_2-added and pure (i.e., w/o N_2-added), as active channel layers. For all the deposited IZO films, effects of additive N_2 gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive N_2 gas. The experimental results indicated that the transistor action occurred when the N_2-added (with N_2 flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film. |