| Title |
The Effect of Sb2O3 Additive on the Electrical Properties of ZnO Varistor |
| DOI |
https://doi.org/10.5370/KIEE.2016.65.10.1697 |
| Keywords |
ZnO varistor ; Grain boundary ; Ohmic region ; Non ohmic region ; Critical voltage ; Nonlinear coefficient |
| Abstract |
The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of Sb_2O_3 concentration. Leakage conduction in the ohmic region increased with increasing Sb_2O_3 concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of Sb_2O_3. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with Sb_2O_3 additive was attributed to the lowered capacitance in the grain boundary layer. |