| Title |
Fabrication and Characterizations of Stretchable Thin-Film Transistor using Parylene Gate Insulating Layer |
| Authors |
정순원(Jung, Soon-Won) ; 류봉조(Ryu, Bong-Jo) ; 구경완(Koo, Kyung-Wan) |
| DOI |
https://doi.org/10.5370/KIEE.2017.66.4.721 |
| Keywords |
Stretchable ; Thin-film transistor ; Parylene ; Gate insulator ; IGZO |
| Abstract |
We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field- effect mobility of 5cm^2V^{-1}s^{-1} and a current on/off ratio of 10^5 at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %. |