Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
Title Transparent UV Photodetector by Atomic-layered ZnO and Silver Nanowires
Authors 노민수(Min-Soo Roh) ; 반동균(Dong-Kyun Ban) ; 박주연(Ju-Yeon Park) ; 김준동(Joondong Kim)
Page pp.1151-1157
ISSN 1975-8359
Keywords ALD ZnO; AgNWs; UV Photodetector
Abstract The highly transparent UV Photodetector was realized by metal oxide layers by using magnetron sputtering system and ALD system.
Device is consisted of p-n junction by p-NiO and n-TiO2. In addition, transmittance reaches near by 50% of value to guarantee the optical view to the human eyes. In order to improve the performance of UV Photodetector, the ALD ZnO layer was applied between NiO and TiO2. By embedding the thin ZnO layer by ALD process, the surface of defects of TiO2 can be relieved, resulting in the significant suppression of the leakage current. The electrically conductive and optically transparent silver nanowires (AgNWs) were coated onto the top layer, working to the hole transport layer (HTL), which is definitely advantageous for improving photocurrent value. The functional uses, ZnO layer of leakage current suppression and AgNWs of photocurrent enhancement, induce the great improve of the transparent UV photodetector performance for quick photo-responses (rise time: 0.98 ms, fall time: 1.59 ms) with high responsivity. This finding of functional use of ALD ZnO and AgNWs may provide a route for high-efficient photoelectric devices, including solar cells and photodetectors