| Title |
Study on the Interatomic Binding Structure of Diamond Thin-Film Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition Process |
| DOI |
https://doi.org/10.5370/KIEE.2019.68.12.1580 |
| Keywords |
Bandgap; Carbon binding structure; Binding energy; Microwave; Plasma; Thin-film |
| Abstract |
In this paper, the effects of carbon source and oxygen flow rates on the growth of high-quality polycrystalline diamond thin-film by MPECVD process and the interatomic binding characteristics by boron doping were investigated. As the N-hexane flow rate increases, the peak near 285.7eV on the high binding energy due to the carbon-carbon double bond ( bond) increases, and the crystallinity was reduced such as the decrease of the peak of single bond ( defect). By supplying oxygen, the sp3 peak, which is a diamond carbon-carbon bond, was evident and the crystallinity was increased. In addition, the valence band electron distribution of the diamond film with high crystallinity was peaked at about 8.7eV, and the bandgap was found to be between 5.2 and 5.5eV. |