| Title |
Datasheet-Based Empirical Trend Analysis of Gate Charge in Commercial Si, SiC Power MOSFETs |
| Authors |
김현진(Hyun Jin Kim) ; 석오균(Ogyun Seok) ; 김민기(Minki Kim) ; 김민재(Minjae Kim) ; 김용상(Yong-Sang Kim) ; 하민우(Min-Woo Ha) |
| DOI |
https://doi.org/10.5370/KIEE.2026.75.10.2445 |
| Keywords |
Gate charge; MOSFET; Si; SiC; Miller charge |
| Abstract |
Gate charge is an important parameter related to the switching and gate-driving characteristics of power MOSFETs. This study presents a datasheet-based empirical trend analysis of 204 commercial 650 V and 1200 V Si and SiC MOSFETs. The relationships among gate charge, gate-drain charge, rated continuous drain current, on-resistance, input capacitance, and gate-charge test voltage were evaluated using Spearman rank correlation with two-sided testing. The SiC devices were generally characterized at higher gate-source test voltages. The findings provide quantitative reference data for power-MOSFET selection and gate-driver design. |