| Title |
The electrical properties of Ni/Cr/Si thin film with sputtering process parameters |
| Authors |
이붕주(Lee, Boong-Joo) ; 박구범(Park, Gu-Bum) ; 김병수(Kim, Byung-Soo) ; 이덕출(Lee, Duck-Chool) |
| Keywords |
Thin Film Resistor ; TCR ; annealing ; sputter process parameter |
| Abstract |
In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [^{circ}C]. The films are annealed to 400 [^{circ}C] in air atmosphere, TCR increases with increasing the annealing temperature. The resistivity was 172 [μω·cm] and 209 [μω·cm] for the RF and DC as a sputtering power sources, respectively. Also, TCR was -52 [ppm/^{circ}C] and -25 [ppm/^{circ}C]. As a results of them, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameter and annealing of thin film. |