| Title |
Fabrication and Properties of MFISFET Using LiNbO_3 Ferroelectric Films |
| Authors |
정순원(Jung, Soon-Won) ; 구경완(Koo, Kyung-Wan) |
| Keywords |
강유전체;히스테리시스;질화알루미늄 LiNbO_3 ; MFISFET ; FRAM |
| Abstract |
MFISFETs with platinum electrode on the LiNbO_3/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. I_D-V_G characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of LiNbO_3 films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[cm^2/V{\cdot}s] and 0.16[mS/mm], respectively. The drain current of 27[{\mu}A] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET. |