| Title |
The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes |
| Authors |
황현석(Hwang, Hyun Suk) ; 유영식(Yu, Yougn Sik) ; 임윤식(Lim, Yun-Sik) ; 강현일(Kang, Hyun-Il) |
| DOI |
https://doi.org/10.5370/KIEEP.2014.63.1.046 |
| Keywords |
PZT ; Perovskite ; Leakage current ; Ruthenium |
| Abstract |
Pb(Zr_{0.52}Ti_{0.48})O_3(PZT) thin films deposited on Ru/RuO_2 bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /RuO_2 capacitor showed a leakage current density in the order of 2.03×10^{-7} A/cm^2 as a 50 kV/cm, a remnant polarization (Pr) of 9.22 {\mu}C/cm^2, and a coercive field (-EC) of -32.22 kV/cm. The results show that Ru/Ru/RuO_2 bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties. |