| Title |
A Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering |
| Authors |
박정철(Park, Jung-Cheul) ; 추순남(Chu, Soon-Nam) |
| DOI |
https://doi.org/10.5370/KIEEP.2015.64.4.277 |
| Keywords |
ITO substrate ; RF power ; Transmittance ; Temperature |
| Abstract |
In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of 300^{\circ}C and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of 250^{\circ}C. |