| Title |
Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting |
| Authors |
이수호(Lee, Su-Ho) ; 김영문(Kim, Young-Mun) ; 김해재(Kim, Hai-Jai) ; 주석민(Joo, Seok-Min) |
| DOI |
https://doi.org/10.5370/KIEEP.2017.66.3.129 |
| Keywords |
Si ; Quantum transport theory ; Equilibrium average projection scheme (EAPS) ; Response formula and the scattering factor formula ; Electron phonon coupling system ; The quantum transition line shapes (QTLS) and the quantum transition line widths (QTLW) |
| Abstract |
We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process. |