| Title |
Impact of Displacement Defect on Laterally Diffused MOS (LDMOS) using Numerical Simulation |
| DOI |
https://doi.org/10.5370/KIEE.2020.69.10.1470 |
| Keywords |
Radiation effect; LDMOS; numerical simulation; TCAD simulation. |
| Abstract |
The effect of displacement defect due to radiation effect is investigated in laterally diffused metal oxide semiconductor (LDMOS) using technology computer-aided design (TCAD) simulation. The displacement defect with acceptor-like trap of deep level (Ec-0.4eV) under shallow trench isolation (STI) induces the worst degradation of Id-Vg characteristic. The location of defect under STI with lightly doping concentration is the worst position to transfer characteristic of Id-Vg. For breakdown voltage characteristic, the positions and types of displacement trap are negligible, because of high drain voltage operation. |