| Title |
Analysis on Short-Term Degradation of Oxide Thin-Film Transistors and Degradation Modeling for Prediction |
| Authors |
박지환(Ji-Hwan Park) ; 강경수(Kyeong-Soo Kang) ; 박준형(Junhyeong Park) ; 이수연(Soo-Yeon Lee) |
| DOI |
https://doi.org/10.5370/KIEE.2023.72.3.402 |
| Keywords |
Thin-film transistors (TFTs); amorphous indium gallium zinc oxide (a-IGZO); stretched exponential; short-term degradation; hysteresis. |
| Abstract |
Gate bias stress can change the threshold voltage of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT).
Especially, short-term degradation of threshold voltage should be compensated since it causes motion artifacts in the display.
Therefore, a new short-term degradation model was proposed based on the stretched-exponential model. Moreover, the accuracy of the proposed model was confirmed by calculating the coefficient of determination between the measured data and the fitted data. |