| Title |
TCAD Analysis of Heavy-Ion-Induced Electric-Field Characteristics in a 650-V SiC MOSFET with a Low-Concentration Double-Epitaxial Structure |
| Authors |
도건진(Geonjin Do) ; 김상엽(Sangyeob Kim) ; 김정태(Jeongtae Kim) ; 강규혁(Gyuhyeok Kang) ; 신원영(Wonyoung Shin) ; 석오균(Ogyun Seok) |
| DOI |
https://doi.org/10.5370/KIEE.2026.75.9.2166 |
| Keywords |
Silicon Carbide (SiC); MOSFET; Electric field; Double-epitaxial structure; Heavy-ion strike; Single-event effect (SEE) |
| Abstract |
This study proposes a low-concentration double-epitaxial structure for a 650-V planar SiC MOSFET to mitigate heavy-ion-induced electric-field crowding near the P-well/drift junction. TCAD simulations were conducted by varying the doping concentration and thickness of the upper epitaxial layer. The static characteristics varied with the upper-epi doping concentration and thickness, showing corresponding changes in breakdown voltage and specific on-resistance. Before the simulated heavy-ion strike, the proposed structure reduced the peak electric field near the P-well/drift junction by 9.6% compared with the conventional single-epi structure. Increasing the upper-epi thickness from 1 to 2 μm reduced the peak electric field by 8.9%. Under a simulated heavy-ion strike, the proposed structure reduced the peak electric field near the P-well/drift junction by 6.2% compared with the conventional single-epi structure. Furthermore, the electric field was distributed over a wider drift region, indicating reduced local electric-field crowding during the transient response following a simulated heavy-ion strike. |