Mobile QR Code QR CODE : The Korean Institute of Power Electronics
Title Device Suitability Analysis by Comparing Performance of SiC MOSFET and GaN Transistor in Induction Heating System
Authors Kwang-Hyung Cha ; Chang-Tae Ju ; Sung-Soo Min ; Rae-Young Kim
DOI 10.6113/TKPE.2020.25.3.204
Page pp.204-212
ISSN 1229-2214
Keywords WBG device; Induction heating; GaN HEMT; SiC MOSFET; Performance comparison
Abstract In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.