Mobile QR Code QR CODE : The Korean Institute of Power Electronics
Title Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil
Authors Ju-A Lee ; Jongeun Byun ; Sangjoon Ann ; Won-Jin Son ; Byoung-Kuk Lee
DOI 10.6113/TKPE.2021.26.3.214
Page pp.214-221
ISSN 1229-2214
Keywords Rogowski coil; Current sensing; Short-circuit protection; SiC MOSFET; Wide band gap
Abstract SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.