| Title |
Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance |
| Authors |
Joonho Shin ; Jong-Won Shin |
| DOI |
https://doi.org/10.6113/TKPE.2022.27.3.206 |
| Keywords |
Power MOSFET; Integrated power module; Accelerated aging test; On-state resistance |
| Abstract |
This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%?3% after 44-hour of the aging test. |