| Title |
CCP and ICP Combination Impedance Matching Device for Uniformity Improvement of Semiconductor Plasma Etching System |
| Authors |
Doo-Yong Jung ; Chang-Woo Nam ; 李Jong-Ho Lee ; Dae-Kyu Choi ; Chung-Yuen Won |
| DOI |
10.6113/TKPE/2010.15.4.274 |
| Keywords |
DFPS; ICP; CCP; Plasma system; Etching system |
| Abstract |
This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12㎒ and 400㎑. |