| Title |
Bidirectional On-State Voltage Measurement Circuit and Method with Enhanced Real-Time Capability for High-Voltage Power Semiconductor Devices |
| Authors |
Hyeonseok Shin ; Sanghyun Moon ; Suwoong Eo ; Hyun-Woo Jung ; Dae-Un Sung ; Jiwon Yoo |
| DOI |
https://doi.org/10.6113/TKPE.2026.31.2.126 |
| ISSN |
1229-2214(pISSN), 2288-6281(eISSN) |
| Keywords |
Auxiliary FET; Power semiconductor; On-state voltage monitoring circuit |
| Abstract |
The on-state voltage of power semiconductor devices is a critical parameter for predicting device degradation and remaining useful lifetime, underscoring the importance of accurate measurements. This study proposes a novel on-state voltage measurement circuit featuring a gate-signal-synchronized measurement mechanism and a noise suppression circuit. This design can mitigate interference caused by parasitic elements of the power device under test. The proposed architecture enables bidirectional voltage sensing and introduces a tunable configuration factor, allowing flexible adaptation to a wide range of power switching devices. Furthermore, a dedicated measurement technique is adopted to compensate for the zero-voltage offset, improving the overall accuracy and reliability of the on-state resistance estimation. |