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Title Recessed AlGaN/GaN UV Phototransistor
Authors 장원호(Won-Ho Jang) ; 김현섭(Hyun-Seop Kim) ; 강명진(Myoung-Jin Kang) ; 조천형(Chun-Hyung Cho) ; 차호영(Ho-Young Cha)
DOI https://doi.org/10.5573/JSTS.2019.19.2.184
Page pp.184-189
ISSN 1598-1657
Keywords AlGaN/GaN heterojunction ; phototransistor ; ultraviolet (UV) ; photoresponsivity
Abstract We developed an AlGaN/GaN heterojunction phototransistor with a recessed detection area to enhance the photoresponsivity. The recessed-AlGaN/GaN phototransistor exhibited a maximum photoresponsivity of 1.6 × 107 A/W at 375 nm, which was ~30% higher than that obtained with a conventional AlGaN/GaN phototransistor. A comparable photoresponsivity was also achieved at 260 nm in UV-C range due to the dual absorption process in conjunction with the polarization induced built-in electric field characteristics of AlGaN/GaN heterojunction.