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Title [REGULAR PAPER] Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry
Authors (Seongjae Cho) ; (Stanley S. Cheung) ; (Yung Hun Jung) ; (Sae-Kyoung Kang) ; (Dal Ho Lee) ; (Byung-Gook Park)
DOI https://doi.org/10.5573/JSTS.2020.20.4.366
Page pp.366-371
ISSN 1598-1657
Keywords Photodetector; silicon-on-insulator; germanium-on-silicon; back-end-of-the-line; optical responsivity; metallization scheme
Abstract In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on silicon-on-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the back-end-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current.