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Title Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure
Authors (Geon Uk Kim) ; (Young Jun Yoon) ; (Jae Hwa Seo) ; (Min Su Cho) ; (Sang Ho Lee) ; (Jin Park) ; (Hee Dae An) ; (So Ra Min) ; (In Man Kang)
DOI https://doi.org/10.5573/JSTS.2021.21.6.398
Page pp.398-405
ISSN 1598-1657
Keywords Gallium nitride (GaN); 3D architecture; field-effect transistor (FET); vertical transistor; power transistor
Abstract In this paper, we designed and analyzed the electrical performances of gallium-nitride (GaN)-based vertical trench metal-oxide-semiconductor field-effect-transistors (MOSFETs) using three-dimensional technical computer-aided design (3-D TCAD) simulation. The cylindrical device is generally considered as superior device than the polygonal devices because it has better gate controllability. In the case of GaN-based vertical devices, however, the cylindrical device performs inferiorly to the hexagonal device in terms of crystal directions for the GaN sidewall plane such as m-plane (1-100), a-plane (11-20), and c-plane (0001). The simulation results provide an understanding and design guidelines for which electrical properties of trench FETs are affected by cross-section shape.