Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2021-12(Vol.21 No.06)
XML PDF INFO REF
Title Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C
Authors (Van Cuong Nguyen) ; (Ho-Young Cha) ; (Hyungtak Kim)
DOI https://doi.org/10.5573/JSTS.2021.21.6.412
Page pp.412-417
ISSN 1598-1657
Keywords Palladium; gallium nitride; nitrogen dioxide sensor; high electron mobility transistor; extreme temperature
Abstract We investigated the performance of NO2 gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures up to 500 °C. A 30-nm Pd catalyst layer as the gate of the transistor sensor was deposited by e-beam evaporator for NO2 sensing. At 500 °C, the sensor showed high sensitivity (8.1%), fast response (6 s) and recovery times (7 s) under 1 ppm NO2, thereby proving to be a great candidate for semiconductor sensors under extreme conditions.