| Title |
Analysis of Switching Characteristics of TO-247-3L and TO-247-4L SiC MOSFETs Based on Chip Size and Temperature Variations |
| Authors |
최서은(Seo-Eun Choi) ; 서연우(Yeon-Woo Seo) ; 박현용(Hyun-Yong Park) ; 정정교(Jung-Kyo Jung) ; 강혜민(Hye-Min Kang) |
| DOI |
https://doi.org/10.5370/KIEE.2025.74.5.917 |
| Keywords |
SiC MOSFETs; Kelvin Source; Common Source; Switching Characteristics; Double Pulse Test |
| Abstract |
Silicon-Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are crucial for next-generation power conversion. Conventional SiC MOSFETs primarily utilize a 3-lead package, which is simple in structure and cost-effective. However, the common source inductance of the package increases switching losses. To address this issue, a 4-lead package has been introduced. Nevertheless, research on its switching characteristics is still limited. This study compares the switching characteristics of TO-247-3L and TO-247-4L SiC MOSFETs with identical chip sizes through double pulse tests. Moreover, switching losses under different temperature conditions were analyzed for various chip sizes of TO-247-3L and TO-247-4L SiC MOSFETs. The findings indicate that switching losses of TO-247-4L SiC MOSFETs were lower than TO-247-3L SiC MOSFETs. Additionally, turn-off energy losses increased with temperature, while turn-on energy losses varied depending on chip sizes and package types. |